Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001).

R E. Balderas-Navarro, N A. Ulloa-Castillo, K. Arimoto, G. Ramírez-Meléndez, L F. Lastras-Martíne1, H. Furukawa, J. Yamanaka, A. Lastras-Martíne1 J M. Flores-Camacho, N. Usami, D. Stifter, and K. Hingerl.
Applied Physics Letters, Vol. 102 No(1), pp. 11902-(4)., 2013.


We report on the use of reflectance difference (RD) spectroscopy aimed to detect and quantify the degree of strain in thin Si films grown on top of misoriented Si1−xCx(001), where it was found that the Si layers are compressively strained. It is demonstrated that RD spectroscopy is suitable for in situ monitoring of strained thin Si films growing on vicinal substrates.